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Results 1 to 25 of 74

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GROWTH AND CHARACTERIZATION OF 1.3 MU M CW GAINASP/INP LASERS BY LIQUID-PHASE EPITAXYNG WW; DAPKUS PD.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 193-198; BIBL. 18 REF.Article

PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD.1979; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1979; VOL. 15; NO 3; PP. 128-135; BIBL. 44 REF.Article

DEGRADATION OF BULK LUMINESCENCE IN GAP: ZN, O INDUCED BY LASER EXCITATION.DAPKUS PD; HENRY CH.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 4061-4066; BIBL. 17 REF.Article

DEEP-LEVEL CHANGES ASSOCIATED WITH THE DEGRADATION OF GALLIUM PHOSPHIDE RED-LIGHT-EMITTING DIODES.HENRY CH; DAPKUS PD.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 4067-4072; BIBL. 17 REF.Article

GA1-XALXAS/GA1-YALYAS DOUBLE-HETEROSTRUCTURE ROOM-TEMPERATURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.DUPUIS RD; DAPKUS PD.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 12; PP. 839-841; BIBL. 20 REF.Article

ROOM-TEMPERATURE OPERATION OF GA1-XALXAS/GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.DUPUIS RD; DAPKUS PD.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 7; PP. 466-468; BIBL. 22 REF.Article

SINGLE-LONGITUDINAL-MODE METALORGANIC CHEMICAL-VAPOR-DEPOSITION SELF-ALIGNED GAALAS-GAAS DOUBLE-HETEROSTRUCTURE LASERSCOLEMAN JJ; DAPKUS PD.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 3; PP. 262-263; BIBL. 17 REF.Article

CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA1-XALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.DUPUIS RD; DAPKUS PD.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 7; PP. 406-407; BIBL. 12 REF.Article

ROOM-TEMPERATURE OPERATION OF DISTRIBUTED-BRAGG-CONFINEMENT GA1-XALXAS-GAAS LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 68-69; BIBL. 14 REF.Article

SINGLE-LONGITUDINAL-MODE CW ROOM-TEMPERATURE GA1-XALXAS-GAAS CHANNEL GUIDE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 8; PP. 724-726; BIBL. 12 REF.Article

VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.DUPUIS RD; DAPKUS PD.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 32; NO 8; PP. 473-475; BIBL. 21 REF.Article

THEORETICAL ANALYSIS OF SINGLE-MODE ALGAAS-GAAS DOUBLE HETEROSTRUCTURE LASERS WITH CHANNEL-GUIDE STRUCTUREYANG JJJ; DUPUIS RD; DAPKUS PD et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7218-7223; BIBL. 7 REF.Article

HIGH-EFFICIENCY GAAIAS/GAAS HETEROSTRUCTURE SOLAR CELLS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.DUPUIS RD; DAPKUS PD; YINGLING RD et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 201-203; BIBL. 14 REF.Article

OBSERVATIONS ON SI CONTAMINATION IN GAP LPE.LORIMOR OG; HASZKO SE; DAPKUS PD et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1230-1233; BIBL. 18 REF.Article

VERY HIGH EFFICIENCY GAP GREEN LIGHT EMITTING DIODES.LORIMOR OG; DAPKUS PD; HACKETT WH JR et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 3; PP. 407-412; BIBL. 25 REF.Article

AN ANALYSIS OF THE PERFORMANCE OF HETEROJUNCTION PHOTOTRANSISTORS FOR FIBER OPTIC COMMUNICATIONSMILANO RA; DAPKUS PD; STILLMAN GE et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 266-274; BIBL. 42 REF.Article

NOVEL TECHNIQUE FOR MEASURING NITROGEN PROFILES IN GAP:N.JAGDEEP SHAH; LEHENY RF; DAPKUS PD et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5244-5246; BIBL. 12 REF.Article

LASER-MACHINED GAP MONOLITHIC DISPLAYS.DAPKUS PD; WEICK WW; DIXON RW et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 6; PP. 292-294; BIBL. 8 REF.Article

ROOM-TEMPERATURE DEEP-STATE EMISSION SPECTRA, RADIATIVE EFFICIENCY, AND LIFETIME OF SOME GAP:TE,N CRYSTALS.BACHRACH RZ; DAPKUS PD; LORIMOR OG et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 11; PP. 4971-4973; BIBL. 11 REF.Article

HIGH EFFICIENCY, LOW-THRESHOLD, ZN-DIFFUSED NARROW STRIPE GAAS GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONHONG CS; COLEMAN JJ; DAPKUS PD et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 208-210; BIBL. 10 REF.Article

INDUCED DISORDER OF ALAS-ALGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURESLAIDIG WD; HOLONYAK N JR; COLEMAN JJ et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 1; PP. 1-20; BIBL. 18 REF.Article

TUNNELING IN THE REVERSE DARK CURRENT OF GAA/ASSB AVALANCHE PHOTODIODESTABATABAIE N; STILLMAN GE; CHIN R et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 415-417; BIBL. 20 REF.Article

A MONOLITHIC GAINASP/INP PHOTOVOLTAIC POWER CONVERTERNG WW; NAKANO K; LIU YZ et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1449-1454; BIBL. 8 REF.Article

DEVICE-QUALITY EPITAXIAL ALAS BY METALORGANIC-CHEMICAL VAPOR DEPOSITIONCOLEMAN JJ; DAPKUS PD; HOLONYAK N JR et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 894-896; BIBL. 19 REF.Article

GUNN OSCILLATION IN GAAS OPTICALLY TRIGGERED BY 1.06 MU M RADIATIONCHIN R; NAKANO K; COLEMAN JJ et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 10; PP. 248-249; BIBL. 5 REF.Article

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